Synthesis and Characterization of Ga-Doped Bismuth Based Superconducting Materials
نویسندگان
چکیده
A series of bismuth based superconducting materials doped with galliumBi Pb Sr Ca Cu Ga O 1.7 0.4 2 2 3-x x y (x = 0.0, 0.02, 0.04, 0.06, 0.08 and 0.10) was synthesized by Simple solid-state reaction method. The samples were characterized by X-ray diffraction, EDX analysis and electrical resistivity and ac magnetic susceptibility measurements. All the samples consist of both low-T (2212) and High-T (2223) phases. The percentage of c c low-Tc phase was found to increase with increase in Ga-content. Zero resistivity temperature Tc was obtained (0) to be less the 106K for doped samples.
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